Method for producing semiconductor device and semiconductor device produced thereby
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United States of America Patent
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Sep 24, 1991
Issued Date -
N/A
app pub date -
Jan 11, 1990
filing date -
Jan 26, 1987
priority date (Note) -
Expired
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Abstract
A method for producing a semiconductor device comprises the steps of: preparing a III.sub.b -V.sub.b group compound single crystalline semiconductor substrate produced by a liquid encapsulated Czochralski process, the single crystalline semiconductor substrate having a carbon concentration of 1.times.10.sup.15 cm.sup.-3 or less, implanting conductive impurity ions into the single crystalline semiconductor substrate and then annealing, and a semiconductor device produced by this method.
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