Non-volatile semiconductor memory device and method for manufacturing the same
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United States of America Patent
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Sep 24, 1991
Grant Date -
N/A
app pub date -
Jul 3, 1989
filing date -
Jul 5, 1988
priority date (Note) -
Expired
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Abstract
A non-volatile semiconductor memory device such as EPROM or EEPROM includes floating and control gates. Thick oxide portions are formed at each end of the floating gate, and the thickness of the thick oxide portion adjacent to a drain region is thicker than that of the thick oxide portion adjacent to a source region.
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