Method and means for producing a layered system of semiconductors
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United States of America Patent
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Oct 1, 1991
Grant Date -
N/A
app pub date -
Jan 9, 1990
filing date -
Jan 14, 1989
priority date (Note) -
Expired
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Abstract
A method and means for producing a layered semiconductor system are proposed wherein the required semiconductor layers are deposited on a carrier layer (10) through interaction with a melt (42). The carrier layer (10) itself may have a basic layer consisting of glass or quartz, which in turn may be formed from a melt by solidification on a metal melt.
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