Process for producing ohmic electrode for p-type cubic system boron nitride
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United States of America Patent
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Oct 15, 1991
Grant Date -
N/A
app pub date -
Oct 23, 1990
filing date -
Oct 23, 1989
priority date (Note) -
Expired
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Abstract
A process for producing an ohmic electrode for p-type cBN is disclosed, which process comprises the steps of: providing a thin alloy film composed of Au and Be, the weight ratio of Be being from 0.1 to 15% by weight, on p-type cBN; providing a thin film of a metal selected from Ni, Cr, Mo, and Pt on the thin alloy film; and subjecting the p-type cBN having the films thus provided to a heat-treatment in an inert gas or in vacuo at a temperature of from 350.degree. C. to 600.degree. C.
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