Semiconductor component having at least one power MOSFET
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United States of America Patent
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-
Oct 22, 1991
Issued Date -
N/A
app pub date -
May 4, 1990
filing date -
Oct 22, 1986
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A discretely constructed MOSFET is switched by a voltage applied between gate terminal and source terminal. The source terminal has a self-inductance in which a fast change of the load current induces a considerable voltage which opposes the applied gate-source bias. This opposing voltage is reduced since the source contact is connected to an auxiliary terminal which is largely magnetically decoupled from the source terminal. A control voltage is applied between gate terminal and auxiliary terminal. When a plurality of MOSFETs are connected in parallel, oscillations in the control circuit can thus be effectively suppressed.
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