US Patent No: 5,060,048
Number of patents in Portfolio can not be more than 2000
Semiconductor component having at least one power MOSFET
Stats
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Oct 22, 1991
Issued date -
May 4, 1990
filing date -
07/520,958
serial no -
Expired
status
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Abstract
A discretely constructed MOSFET is switched by a voltage applied between gate terminal and source terminal. The source terminal has a self-inductance in which a fast change of the load current induces a considerable voltage which opposes the applied gate-source bias. This opposing voltage is reduced since the source contact is connected to an auxiliary terminal which is largely magnetically decoupled from the source terminal. A control voltage is applied between gate terminal and auxiliary terminal. When a plurality of MOSFETs are connected in parallel, oscillations in the control circuit can thus be effectively suppressed.
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First Claim
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International Classification(s)
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Cited Art
| Patent Info | (Count) | # Cites | Year |
|---|---|---|---|
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| 4,462,041 High speed and current gain insulated gate field effect transistors | 25 | 1981 | |
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| 4,739,389 High-frequency circuit arrangement and semiconductor device for use in such an arrangement | 20 | 1986 | |