US Patent No: 5,060,048

Number of patents in Portfolio can not be more than 2000

Semiconductor component having at least one power MOSFET

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Abstract

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A discretely constructed MOSFET is switched by a voltage applied between gate terminal and source terminal. The source terminal has a self-inductance in which a fast change of the load current induces a considerable voltage which opposes the applied gate-source bias. This opposing voltage is reduced since the source contact is connected to an auxiliary terminal which is largely magnetically decoupled from the source terminal. A control voltage is applied between gate terminal and auxiliary terminal. When a plurality of MOSFETs are connected in parallel, oscillations in the control circuit can thus be effectively suppressed.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
SIEMENS AKTIENGESELLSCHAFTMUNICH18136

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Amann, Heinz Garching, DE 3 39
Hebenstreit, Ernst Munich, DE 9 82
Lorenz, Leo Neubiberg, DE 6 57
Schierz, Winfried Heideck, DE 5 39

Cited Art Landscape

Patent Info (Count) # Cites Year
 
HARRIS CORPORATION (1)
4,462,041 High speed and current gain insulated gate field effect transistors 27 1981
 
U.S. Philips Corporation (1)
4,739,389 High-frequency circuit arrangement and semiconductor device for use in such an arrangement 20 1986

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
IXYS SEMICONDUCTOR GMBH (1)
6,507,108 Power semiconductor module 4 2000
 
Kabushiki Kaisha Toyoda Jidoshokki Seisakusho (1)
6,445,068 Semiconductor module 6 2000
 
POWER INTEGRATIONS, INC. (1)
6,084,277 Lateral power MOSFET with improved gate design 40 1999
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (1)
5,442,218 CMOS power fet driver including multiple power MOSFET transistors connected in parallel, each carrying an equivalent portion of the total driver current 9 1993