TAB bonded semiconductor device having off-chip power and ground distribution
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United States of America Patent
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-
Oct 22, 1991
Grant Date -
N/A
app pub date -
Sep 4, 1990
filing date -
Sep 4, 1990
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
In a TAB bonded semiconductor device, off-chip power and ground distribution is provided by electrically conductive leads spanning across the face of the semiconductor device. Means for supporting at least one TAB lead carrying a power or ground signal across the face of the semiconductor device to an external bonding site is positioned in a central portion of the chip bonding area. In accordance with one embodiment of the invention, a semiconductor device is provided having a plurality of bonding pads arrayed on at least two sides of a face surface thereon. At least one TAB lead is bonded to a bonding pad on a first side of the face surface and spans across the face surface and is bonded to a bonding pad located in a second side of the face surface. An interior tape section overlies a central portion of the face surface supporting the TAB lead.
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