Semiconductor device having a metal silicide layer connecting two semiconductors
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United States of America Patent
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Oct 29, 1991
Issued Date -
N/A
app pub date -
Feb 28, 1989
filing date -
Jul 15, 1980
priority date (Note) -
Expired
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Abstract
A method for manufacturing a semiconductor device that includes p- and n-type regions formed on an insulating substrate, and an interconnection layer electrically coupled with these p- and n-type regions. The interconnection layer is an n-type polycrystalline silicon layer which is electrically coupled with the p- and n-type regions through a metal silicide film formed between the interconnection layer and the p- and n-type regions.
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