High density, independently addressable, surface emitting semiconductor laser/light emitting diode arrays
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United States of America Patent
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Oct 29, 1991
Grant Date -
N/A
app pub date -
Dec 28, 1990
filing date -
Dec 28, 1990
priority date (Note) -
Expired
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Abstract
A high density surface emitting semiconductor LED array comprises disordered regions extending through a contact layer, a second confinement layer, an active layer and partially extending through a first confinement layer to define optical cavities therebetween the disordered regions, individual contacts on the contact layer aligned with each disordered region inject current through the optical cavity to a contact on a substrate causing emission of light from the active layer in the optical cavity through the surface of the contact layer. The first confinement layer can be replaced with a DBR to form an enhanced LED array. Both confinement layers can be replaced with DBRs to form a laser array. The first confinement layer can be replaced with a distributed Bragg reflector (DBR) and a dielectric mirror stack can be formed on the contact layer to form a laser array.
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