Amorphous silicon thin film transistor array substrate and method for producing the same
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United States of America Patent
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-
Nov 12, 1991
Issued Date -
N/A
app pub date -
Jun 4, 1990
filing date -
Feb 26, 1988
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An amorphous silicon thin film transistor array substrate is formed on an insulating substrate with a gate insulating layer, as gate wiring itnerconnecting gate electrodes and source wiring interconnecting source electrodes. The gate insulating layer is provided in a lower layer of a terminal part of the source wiring. In the process for forming the array, the gate insulating layer is formed in a portion of the structure other than the terminal part of the gate, and the terminal part of the source wiring is formed on the gate insulating layer.
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