Electrically programmable antifuse element incorporating a dielectric and amorphous silicon interlayer
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United States of America Patent
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Dec 3, 1991
Grant Date -
N/A
app pub date -
Apr 12, 1990
filing date -
Apr 12, 1990
priority date (Note) -
Expired
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Abstract
An electrically programmable antifuse element incorporates a composite interlayer of dielectric material and amorphous silicon interposed between two electrodes. The lower electrode may be formed from a refractory metal such as tungsten. Preferably, a thin layer of titanium is deposited over the tungsten layer and its surface is then oxidized to form a thin layer of titanium oxide which serves as the dielectric material of the composite dielectric/amorphous silicon interlayer. A layer of amorphous silicon is then deposited on top of the titanium oxide dielectric to complete the formation of the composite interlayer. A topmost layer of a refractory metal such as tungsten is then applied over the amorphous silicon to form the topmost electrode of the antifuse.
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