Process for the anisotropic etching of a III-V material and application to the surface treatment for epitaxial growth
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United States of America Patent
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Dec 24, 1991
Issued Date -
N/A
app pub date -
Aug 17, 1990
filing date -
May 21, 1987
priority date (Note) -
Expired
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Abstract
Process for the anisotropic etching of a III-V material and application to surface treatment for epitaxial growth. This process includes the step of etching a III-V material (2) by reactive ionic etching using a gaseous mixture containing by volume 20 to 30% of at least one gaseous hydrocarbon, 30 to 50% of at least one inert gas and 20 to 50% of hydrogen. Said etching can be performed locally with the aid of a Si.sub.3 N.sub.4 etching mask (4a).
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