Process of making a high photosensitive depletion-gate thin film transistor
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United States of America Patent
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Dec 24, 1991
Grant Date -
N/A
app pub date -
Jul 26, 1990
filing date -
Jul 26, 1990
priority date (Note) -
Expired
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Abstract
Disclosed is a process for making a thin film transistor photodetector which has the combined merits of the photodiode and the photoconductor without their problems. The resulting device of this process has an accumulation gate on the bottom of the active semiconductor layer and a transparent depletion gate on the top of the active semiconductor layer. The gate length of the depletion gate is smaller than that of the accumulation gate.
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