Method of manufacturing image sensors
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United States of America Patent
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Dec 24, 1991
Grant Date -
N/A
app pub date -
Sep 7, 1990
filing date -
Nov 16, 1989
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An image sensor manufacturing method, in which a chromium layer or the tantalum layer as barrier metal is formed on the semiconductor layer as the ohmic contact layer of the thin film transistor switching element (TFT). With use of the chromium layer or the tantalum layer, the semiconductor layers of an n.sup.+ hydrogenated amorphous silicon (n.sup.+ a-Si:H) can be protected when metal, e.g., aluminum, is vapor deposited or deposited by the sputtering method. Accordingly, the characteristic of the semiconductor layers can be kept intact, and consequently the reliability of the image sensor is improved. Further, when the chromium layer or the tantalum layer as barrier metal is formed, the lower electrode portion of the photo detect element is formed using the same layer, in the same photolithograph process. Accordingly, the manufacturing of image sensors is simpler than that of the same in which the photo detect elements and the TFTs are formed in different process steps.
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