Sputtering target used for forming quinary superconductive oxide
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United States of America Patent
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Dec 31, 1991
Grant Date -
N/A
app pub date -
Jun 8, 1989
filing date -
Dec 7, 1988
priority date (Note) -
Expired
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Abstract
A target used for forming a thin film of a quinary superconductive oxide contains metal copper ranging between about 8% and about 40% by volume dispersed into a quaternary or a quinary complex oxide, and the metal copper improves the thermal conductivity and the electrical conductivity of the target, so that cracks are less liable to take place in the target and the target is applicable to a d.c. sputtering system, thereby decreasing the production cost of the thin film.
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