Process for etching a metal oxide coating and simultaneous deposition of a polymer film, application of this process to the production of a thin film transistor

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United States of America Patent

PATENT NO 5079178
SERIAL NO

07448052

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Abstract

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The process of the invention consists of subjecting a metal oxide coating (106, 108), located on a glass substrate (100), to the action of a gaseous plasma (109) containing 10 to 88% by volume of hydrogen, 2 to 30% by volume of a hydrocarbon and 10 to 50% of an inert vector gas, bringing about the formation of a polymer coating (110) on the parts of the substrate not provided with oxide, by dissocation of the gaseous mixture, and the partial chemical etching of the oxide (106, 108) by the formation of organometallic compounds.

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Patent Owner(s)

  • ETAT FRANCAIS, REPRESENTE PAR LE MINISTRE DES POSTES, DES TELECOMMUNICATIONS ET DE L'ESPACE (CENTRE NATIONAL D'ETUDES DES TELECOMMUNICATIONS);L'ETAT FRANCAIS, REPRESENTE PAR LE MINISTRE DES POSTES, DES TELECOMMUNICATIONS ET DE L'ESPACE (CENTRE NATIONAL D'ETUDES DES TELECOMMUNICATIONS)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chouan, Yannick Louannec, FR 6 197
Favennec, Jean-Luc Saint Quay Perros, FR 2 37

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