Selective deposition of polycrystalline silicon
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United States of America Patent
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Jan 14, 1992
Grant Date -
N/A
app pub date -
Sep 4, 1990
filing date -
Sep 4, 1990
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for selectively depositing polysilicon on a semiconductor surface (13) is accomplished by preparing the surface (13) in a manner to provide a contamination free surface. The contamination free semiconductor surface is placed into a chemical vapor deposition reactor. The semiconductor surface (13) is exposed to a single crystal inhibitor gas to prevent formation of single crystal silicon on surface (13). Semiconductor surface (13) is then exposed to a silicon containing gas with a hydrogen source to form the polysilicon.
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