Method of forming electrical contact between interconnection layers located at different layer levels
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United States of America Patent
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-
Jan 14, 1992
Grant Date -
N/A
app pub date -
Jun 4, 1990
filing date -
Jun 6, 1989
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method of forming an electrical contact between interconnection layers located at different layer levels includes the steps of forming a contact hole in an interlayer insulating film, and forming a metallic intermediate layer on an exposed surface portion of a first conductive interconnection layer and the interlayer insulating film. Then, a portion of said metallic intermediate layer exposed through said contact hole and an oxide film formed on said surface portion of the first conductive interconnection layer are eliminated by an etching process. This process is carried out in a vacuum. After that, in the vacuum, a second conductive interconnection layer is formed in said contact hole and formed on said interlayer insulating film so that an electrical contact between said first and second conductive interconnection layers are formed.
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