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Abstract

A method of forming a polycrystalline film, such as a diamond, on a foreign substrate involves preparing the substrate before film deposition to define discrete nucleation sites. The substrate is prepared for film deposition by forming a pattern of irregularities in the surface thereof. The irregularities, typically craters, are arranged in a predetermined pattern which corresponds to that desired for the location of film crystals. The craters preferrably are of uniform, predetermined dimensions (in the sub-micron and micron size range) and are uniformly spaced apart by a predetermined distance. The craters may be formed by a number of techniques, including focused ion beam milling, laser vaporization, and chemical or plasma etching using a patterned photoresist. Once the substrate has been prepared the film may be deposited by a number of known techniques. Films prepared by this method are characterized by a regular surface pattern of crystals which may be arranged in virtually any desired pattern. Diamond film materials made by this technique may be used in many electrical, optical, thermal and other applications.

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First Claim