Method of forming semiconducting amorphous silicon films from the thermal decomposition of dihalosilanes
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United States of America Patent
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Jan 21, 1992
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N/A
app pub date -
Dec 31, 1987
filing date -
Oct 3, 1986
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Expired
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Abstract
The invention relates to the chemical vapor deposition of dihalogenated silanes to form stable, abrasion resistant, photoconductive, dopable semiconductor amorphous films on substrates. Additional hydrogen and plasma discharge conditions are not necessary to practice the invention.
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