Method for filling contact hole
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United States of America Patent
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-
Jan 28, 1992
Issued Date -
N/A
app pub date -
May 29, 1990
filing date -
Apr 15, 1986
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for filling a contact hole in which (i) a silicon dioxide layer is formed on a silicon substrate; (ii) a contact hole is formed in the silicon dioxide layer; (iii) polysilicon film is formed on the side and bottom surface portions of the contact hole; (iv) gas containing tungsten reacts with the film; and (v) the contact hole is filled up with tungsten.
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