Hydrofluoric acid etcher and cascade rinser
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United States of America Patent
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Feb 18, 1992
Grant Date -
N/A
app pub date -
Dec 3, 1990
filing date -
Dec 3, 1990
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An apparatus used to HF gas etch a plurality of integrated circuit wafers within an etch chamber, followed by a de-ionized water cascade rinse in the chamber. On completion of the rinse and removal of the wafer carriers, the apparatus, housing, and supply conduits are purged with an inert gas to prepare the apparatus for a next batch of wafer carriers. The apparatus includes process-control means for automatically controlling each step of the process.
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