SOI MOS transistor with a substrate-source connection

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United States of America Patent

PATENT NO 5089870
SERIAL NO

07534644

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Abstract

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An SOI MOS transistor comprises at least a highly doped lateral stripe (13, 14) of the same conductivity type as the substrate (3). This stripe extends along the edge of the substrate and of the source region (5) and is shorted with the source region through the conductive source layer (11).

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Patent Owner(s)

  • FRENCH STATE REPRESENTED BY THE MINISTER OF POST, TELECOMMUNICATIONS AND SPACE (CENTRE NATIONAL D'ETUDES DES TELECOMMUNICATIONS);L'ETAT FRANCAIS, REPRESENTE PAR LE MINISTRE DES POSTES, DES TELECOMMUNICATIONS ET DE L'ESPACE (CENTRE NATIONAL D'ETUDES DES TELECOMMUNICATIONS)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Haond, Michel Meylan, FR 17 518

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