Plasma CVD of aluminum films
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United States of America Patent
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Feb 25, 1992
Grant Date -
N/A
app pub date -
Sep 19, 1990
filing date -
Sep 26, 1989
priority date (Note) -
Expired
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Abstract
A deposited film formation method which forms an aluminum film by use of the plasma CVD method, wherein a substrate having an electron donative surface (A) and a non-electron donative surface (B) is arranged in a space for deposited film formation having a portion which is increased in cross-sectional area toward said substrate is arranged, and a gas of trimethylaluminum and hydrogen gas are introduced into said space for deposited film formation to deposit an aluminum film selectively on said electron donative surface (A). A deposited film formation method which forms an aluminum film by use of the plasma CVD method, comprising: (a) the step of arranging a substrate having an electron donative surface (a) and a non-electron donative surface (B) in a space for deposited film formation equipped with a reverse flow preventive means into plasma, and (b) the step of introducing a gas of trimethylaluminum and hydrogen gas into said space for deposited film formation, said aluminum film being selectively formed on said electron donative surface (A).
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