Substrate used for fabrication of thick film circuit
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United States of America Patent
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-
Mar 17, 1992
Grant Date -
N/A
app pub date -
Feb 5, 1990
filing date -
Feb 3, 1989
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An insulating substrate is used for fabrication of a thick film circuit and comprises a foundation of aluminum nitride and a surface film structure provided on the foundation, in which the foundation contains at least one oxidizing agent selected from the group consisting of an yttrium oxide and a calcium oxide ranging from 0.1% to 10% by weight for enhancing a stiffness of the foundation, and in which the surface film structure is of the multi-level surface film structure having a lower surface film of an aluminum oxide rapidly grown on the foundation in the presence of the oxidizing agent and an upper surface film containing a silicon oxide and a substance selected from the group consisting of a zirconium oxide, a titanium oxide and a boron oxide for enhancing the resistivity against a firing operation.
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