Method of processing a semiconductor substrate including silicide bonding
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United States of America Patent
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Mar 24, 1992
Grant Date -
N/A
app pub date -
Jan 8, 1991
filing date -
Jan 8, 1991
priority date (Note) -
Expired
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Abstract
A method for processing at least two semiconductor wafers for producing a partially processed semiconductor substrate which can be subsequently further processed utilizing conventional planar semiconductor processing techniques to achieve a complementary semiconductor structure in which a plurality of matched semiconductor elements can be formed. An embedded silicide layer in the bonded semiconductor substrate acts as a conduit for horizontally dispersing dopant during the diffusion process. The dopant subsequently up-diffuses into an adjacent silicon region forming generally uniform and shallow, buried layer regions.
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