Plasma etching device and process
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United States of America Patent
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-
Mar 24, 1992
Issued Date -
N/A
app pub date -
Sep 29, 1989
filing date -
Aug 16, 1974
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Plasma etching device and process in which a chamber is divided into two regions by a perforated screen. Objects to be etched are placed in one region, and a plasma is formed in the other region. Etching occurs in the first region, and structure is included for heating the etched objects in the first region to facilitate the removal of photoresist used to define the areas to be etched.
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Cited Art Landscape
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