Method of manufacturing a semiconductor device having a silicide layer
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United States of America Patent
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-
Apr 7, 1992
Issued Date -
N/A
app pub date -
Nov 9, 1990
filing date -
Nov 10, 1989
priority date (Note) -
Expired
status (Latency Note)
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Abstract
According to the method of manufacturing a semiconductor device of the present invention, an insulation film is formed on a silicon substrate, and a resist film having a predetermined pattern is formed on the insulation film, followed by forming an opening on the insulation film with the resist film performing as a mask. Then, an impurity having conductivity are implanted into said silicon substrate with the resist film performing as a mask and silicon ions are implanted into the silicon substrate with the resist film performing as a mask. After that, the resist film is removed. Further, a refractory metal film which covers at least the opening is formed. Moveover, a diffusion layer which causes electrical activation of the impurity having conductivity is formed by annealing, followed by formation a silicide layer at where the surfaces of the silicon substrate and the metal film meet.
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