Semiconductor device with interfacial electrode layer
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United States of America Patent
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Apr 7, 1992
Issued Date -
N/A
app pub date -
Jul 8, 1991
filing date -
Mar 30, 1989
priority date (Note) -
Expired
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Abstract
A semiconductor device having a thin film silicon-containing active layer and a metallic first electrode is provided with an interfacial metallic layer at an inner surface of a second electrode to increase electrical resistance and thereby reduce shunts adjacent pinhole-type defects of the active layer. The interfacial layer is preferably made of a metal selected from the group consisting of tin, gold, titanium, palladium and tantalum.
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