Semiconductor device and a method for manufacturing the same
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United States of America Patent
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Apr 7, 1992
Grant Date -
N/A
app pub date -
Mar 20, 1990
filing date -
Apr 3, 1989
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A MOS transistor has a gate electrode, a source region and a drain region formed on a substrate. A titanium silicide film is formed above the gate electrode and the source and drain regions. A titanium nitride layer whose melting point is higher than that of the silicide film is formed between the substrate and the titanium silicide film. The nitride layer prevents the silicide film from agglomerating during the thermal treatment in a manufacturing process. The nitride layer is formed by implanting nitrogen ions into the silicide film and performing and annealing treatment.
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