Making and testing an integrated circuit using high density probe points

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United States of America Patent

PATENT NO 5103557
SERIAL NO

07482135

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Each transistor or logic unit on an integrated circuit wafer is tested prior to interconnect metallization. By means of CAD software, the transistor or logic units placement net list is revised to substitute redundant defect-free logic units for defective ones. Then the interconnect metallization is laid down and patterned under control of a CAD computer system. Each die in the wafer thus has its own interconnect scheme, although each die is functionally equivalent, and yields are much higher than with conventional testing at the completed circuit level. The individual transistor or logic unit testing is accomplished by a specially fabricated flexible tester surface made in one embodiment of several layers of flexible silicon dioxide, each layer containing vias and conductive traces leading to thousands of microscopic metal probe points on one side of the test surface. The probe points electrically contact the contacts on the wafer under test by fluid pressure.

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Patent Owner(s)

Patent OwnerAddress
ELM TECHNOLOGY CORPORATION ( A CALIFORNIA CORP )1061 E MOUNTAIN DRIVE MOUNTECITO CA 93108

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Leedy, Glenn J 1061 E. Mountain Dr., Santa Barbara, CA 93108 80 9153

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