Method for epitaxial growth from the vapor phase of semiconductor materials
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United States of America Patent
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Apr 28, 1992
Issued Date -
N/A
app pub date -
Dec 6, 1988
filing date -
Dec 17, 1985
priority date (Note) -
Expired
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Abstract
A method for carrying out epitaxial growth from the vapor phase of layers of semiconductor materials on semiconductor substrates, in a chamber being mainly constituted by a tube containing a susceptor for the substrate, in which tube gaseous components are circulated from one end to the other at a pressure and a temperature suitable to obtain the epitaxial growth of the monocrystalline layers on the substrate. The temperature of the wall of the chamber opposite to the susceptor, this wall being designated as the ceiling of the chamber is regulated, to produce variations of the deposition profile of the epitaxial layer formed on the substrate. Application: manufacture of discrete components of III-V semiconductor materials.
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