Diamond crystal growth process
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United States of America Patent
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Apr 28, 1992
Issued Date -
N/A
app pub date -
Dec 24, 1990
filing date -
May 26, 1988
priority date (Note) -
Expired
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Abstract
The steady state operating parameters of a low pressure chemical vapor deposition process for making diamond, i.e., nucleation-growth and graphite removal, are applied as controlled sequential steps to favor nucleation and growth.
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