Importance

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Abstract

Disclosed is a method of isotropically dry etching a WSi.sub.x /polysilicon sandwich structure on a silicon substrate wafer containing integrated semiconductor circuits. The method is conducted within a parallel plate reactor which in operation provides a substantially constant power density over the parallel plates. The reactor parallel plates are spaced a preselected separation distance from one another and a preselected amount of electrical power is applied thereto. Gases are injected to within the reactor provide a reactive gas mixture at a preselected pressure. The reactive gas mixture comprises SF.sub.6, Cl.sub.2, and O.sub.2 in approximate respective volume ratios of 7.0.+-.5%:5.0.+-.5%:4.0.+-.5%. The wafer is subjected to the reactive gas mixture at the preselected pressure for a preselected amount of time to selectively obtain a desired isotropic etch of the WSi.sub.x /polysilicon.

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First Claim