Solar cells with reduced recombination under grid lines, and method of manufacturing same
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United States of America Patent
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May 12, 1992
Grant Date -
N/A
app pub date -
Jan 23, 1991
filing date -
Jan 23, 1991
priority date (Note) -
Expired
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Abstract
Photovoltaic apparatus includes a passivating oxide layer formed directly on the surface of a first conductivity type amorphous silicon material in a pattern corresponding substantially to a preselected metalized wide grid layer pattern. The patterned oxide layer is used as a mask to form a diffused layer of opposite conductivity type amorphous silicon material on those surface portions not covered by the oxide layer. The metalized grid layer is then formed on the oxide layer, covering the oxide layer, and overlapping the diffused opposite conductivity type layer at the edges to form continuous or intermittent ohmic contact areas with the diffused layer along the oxide layer-diffused layer boundaries.
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