Method of forming planar vacuum microelectronic devices with self aligned anode
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United States of America Patent
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May 12, 1992
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N/A
app pub date -
Dec 24, 1990
filing date -
Dec 24, 1990
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Expired
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Abstract
A method for forming on a substrate a microelectronic device having a first and second element. According to the method, a first conductive layer is deposited on the surface. Next, a cap material is deposited, then the first element and a first element cap are formed from the first conductive layer and the cap material respectively. A sacrificial material is conformally deposited, then a second conductive layer is conformally deposited. The second conductive layer is anisotropically etched to form the second element. Finally, the sacrificial material is anisotropically etched.
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