Method of producing a quasi-flat semiconductor device capable of a multi-wavelength laser effect and the corresponding device
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United States of America Patent
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May 19, 1992
Issued Date -
N/A
app pub date -
Apr 25, 1991
filing date -
Jan 20, 1989
priority date (Note) -
Expired
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Abstract
A semiconductor device capable of producing a multiwavelength laser effect comprising a substrate having thereon at least two double heterostructure stacks, each stack comprising at least one active layer bounded by two confinement layers, the stacks being in the form of elongated strips disposed side-by-side, electrically insulated from each other. Each stack comprises a P-N junction therein which is individually and electrically operable and which is situated in the vicinity of an active layer of a different composition and rank in each stack. The transverse opposite ends of the strips are optically prepared and the upper surfaces of the strips form an upper surface for the device which is substantially flat.
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