Semiconductor device and semiconductor memory device
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United States of America Patent
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May 19, 1992
Issued Date -
N/A
app pub date -
Aug 5, 1991
filing date -
Nov 21, 1988
priority date (Note) -
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Abstract
A semiconductor device, such as an FET or a charge coupled device, is provided having a channel or a charge coupled portion formed in a thin semiconductor layer which is substantially perpendicular to the substrate. Necessary electrodes, such as the gate electrode, and necessary insulating layers can be added at the thin semiconductor layer, and can maintain the necessary amount of electric current by securing the height of the semiconductor layer. The structure has the advantage that it can have its plane size reduced. Further, the semiconductor memory device using the above semiconductor device is suitable to high integration and has excellent electric characteristics.
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