Low tuning rate PbTe/PbEuSeTe buried quantum well tunable diode lasers and arrays
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United States of America Patent
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Jun 2, 1992
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N/A
app pub date -
Nov 21, 1990
filing date -
Feb 24, 1989
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Abstract
A PbTe/PbEuSeTe buried quantum well diode laser and array and the method for making the same. The quantum well active region layer is buried between electrical and optical confinement regions which have an energy band gap greater than the active buried layer and an index of refraction less than the active layer. The buried structure enhances electrical and optical confinement, reduces threshold currents, and provides a stable single mode laser. The buried laser and array are produced using a two-step molecular beam epitaxy method.
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