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Abstract

A non-volatile semiconductor memory device is comprised of a floating gate electrode disposed on and electrically insulated from a semiconductor substrate for storing electric charge. A tunnel insulating film is disposed in contact with the floating gate electrode to inject and extract the electric charge to and from the floating gate electrode in the form of an electric tunnel current flowing through the tunnel insulating film. The tunnel insulating film is composed of silicon oxide chemically-vapor-deposited at a temperature between 700.degree. C. and 900.degree. C. from the vapor mixture of dichlorosilane and dinitrogen monoxide on the order of 100 .ANG. thickness to thereby establish a breakdown current density more than 1.0 A/cm.sup.2.

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First Claim