Thin-film capacitors and process for manufacturing the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 5122923
SERIAL NO

07575368

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A thin-film capacitor comprises a substrate, a first electrode, of polycrystalline silicon, a second electrode, a dielectric, and a third electrode such as aluminum in the structure stacked in sequence from bottom to top. The second electrode directly on which the dielectric layer is formed is made from a member selected from the group consisting of ruthenium, ruthenium oxide, ruthenium silicide, rhenium, rhenium oxide, rhemium silicide, osmium, osmium oxide, osmium silicide, rhodium, rhodium oxide, rhodium silicide, iridium, iridium oxide and iridium silicide.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
NEC CORPORATIONTOKYO10615

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Matsubara, Shogo Tokyo, JP 24 500
Miyasaka, Yoichi Tokyo, JP 34 825

Cited Art Landscape

Patent Info (Count) # Cites Year
 
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NATIONAL SEMICONDUCTOR CORPORATION (1)
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Alfred University (1)
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* Cited By Examiner

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
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* Cited By Examiner