Thin-film capacitors and process for manufacturing the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 5122923
SERIAL NO

07575368

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A thin-film capacitor comprises a substrate, a first electrode, of polycrystalline silicon, a second electrode, a dielectric, and a third electrode such as aluminum in the structure stacked in sequence from bottom to top. The second electrode directly on which the dielectric layer is formed is made from a member selected from the group consisting of ruthenium, ruthenium oxide, ruthenium silicide, rhenium, rhenium oxide, rhemium silicide, osmium, osmium oxide, osmium silicide, rhodium, rhodium oxide, rhodium silicide, iridium, iridium oxide and iridium silicide.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
NEC CORPORATION A CORP OF JAPAN7-1 SHIBA 5-CHOME MINATO-KU TOKYO

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Matsubara, Shogo Tokyo, JP 24 532
Miyasaka, Yoichi Tokyo, JP 37 860

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation