Single crystal silicon substrate
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 23, 1992
Grant Date -
N/A
app pub date -
Mar 14, 1990
filing date -
Mar 28, 1989
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A single crystal silicon substrate which comprises an electric insulation member and a single crystal silicon film formed on the insulation member. The silicon film has first regions and second regions. Each of the first regions is formed as a strip shape and has a high density of inorganic impurities implanted thereinto. Each of the second regions is formed as a strip shape and has a low density of the impurities. The first and second regions are alternatively arranged contacting with each other so that the first regions are separated from each other.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully