Crystal growth method and apparatus
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United States of America Patent
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Jun 23, 1992
Grant Date -
N/A
app pub date -
Jan 28, 1991
filing date -
Jan 28, 1991
priority date (Note) -
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Abstract
In growing ingots of crystalline semiconductor material in a crucible, a seed crystal (35) contains a slot (36) which meshes with a wall portion (33) of the crucible for fixing the crystal orientation of the seed crystal with respect to the crucible. The crucible contains crystallographic reference flats (26 and 27) which are manifested as reference flats (26' and 27') of wafers cut from ingots grown in the crucible. The slots (36) in the seed crystal can be formed by forming slots (39) in a larger crystal (38) from which the seed crystals (35) are formed by coring.
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