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Abstract

The invention is a method of forming a conductive contact plug and an interconnect line independent of each other. The contact plug is formed using laser planarization and a blanket etch back. The invention is also the contact plug thus formed. The contact plug and interconnect line may be fabricated with conductive materials having substantially similar methods of deposition. The integrity of the contact plug is enhanced using laser planarization. The process begins with a wafer having a dielectric layer, the upper surface of which has been planarized. A masking step defines a contact hole. An etch creates the contact hole which passes through the dielectric layer to a conductive region where contact is to be made. A first layer of conductive material is then deposited overlying the dielectric layer. A layer of material having an anti-reflective coating (ARC) (or a layer of material having a higher boiling point than the first layer) is deposited overlying the first layer. The ARC enhances the fluidity of the first layer during a subsequent laser planarization. The first layer and ARC overlying the dielectric are then laser planarized. The laser planarization is followed by a blanket etch of the first layer and ARC. The etch forms a contact plug substantially coplanar with the surface of the dielectric layer. At this juncture a second layer of conductive material may be deposited and masked to form interconnect lines for joining contact plugs.

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First Claim