A sputter coating apparatus displays set and alternative machine parameters, entered or calculated from entered or measured data, for selection by the operator. The apparatus performs a sputter coating process to produce sputter coated articles in accordance with the selected machine parameters. Process parameters familiar to the person creating the process, such as desired coating thickness and desired deposition rate, may be entered by the operator. Measured data such as actual coating thickness at a plurality of points on a previously processed wafer may be entered by an operator or automatically measured from a wafer. Alternative machine parameters such as target sputtering power may be entered by an operator or calculated from entered process parameters or measured data. The operator selects and initiates a process in accordance with the selections by entering commands. The machine parameters control separately the sputtering from different regions of the sputtering surface of a one piece sputtering target by alternately energizing different plasmas over the different target regions and energizing the target in accordance with different machine parameters.
* 4,401,539 Sputtering cathode structure for sputtering apparatuses, method of controlling magnetic flux generated by said sputtering cathode structure, and method of forming films by use of said sputtering cathode structure
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