Flash EEPROM array with paged erase architecture

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United States of America Patent

PATENT NO 5126808
SERIAL NO

07426601

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Abstract

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A flash EEPROM array architecture including a plurality of pages is provided according to the principles of this invention. Each page of the array is isolated from other pages in the array during reading, programming and erasing of the page. The novel architecture of this invention includes means for erasing through the gate of the flash EEPROM cell.

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Patent Owner(s)

Patent OwnerAddress
CYPRESS SEMICONDUCTOR CORPORATION198 CHAMPION COURT SAN JOSE CA 95134

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Montalvo, Antonio J San Francisco, CA 8 525
Van, Buskirk Michael A San Jose, CA 71 2539

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