Semiconductor non-volatile memory
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United States of America Patent
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Jun 30, 1992
Issued Date -
N/A
app pub date -
Nov 29, 1988
filing date -
Oct 15, 1985
priority date (Note) -
Expired
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Abstract
A semiconductor non-volatile memory for use in a computer or the like has an erasing electrode and a writing electrode provided adjacent to a floating gate electrode through respective tunnel oxide films. Rewriting of the memory is effected by applying a strong electric field to each of the tunnel oxide films through the erasing and writing electrodes only in the forward direction so that it is difficult for the tunnel oxide film to break down worn due to the application of the electric field.
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