MOS memory circuit with fast access time
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United States of America Patent
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Jul 21, 1992
Issued Date -
N/A
app pub date -
Mar 25, 1991
filing date -
Dec 14, 1989
priority date (Note) -
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status (Latency Note)
Importance
Abstract
An improved MOS memory circuit using an MOS clamp circuit on the bitlines which turns on when the voltage on a bitline exceeds a predetermined voltage, thereby drawing current from the bitline to remove excess charge and return the bitline to the predetermined voltage. The clamp circuit of this invention allows prompt read access because reading is not substantially delayed by the excess bitline charge.
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