Thin film deposition system

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United States of America Patent

PATENT NO 5135629
SERIAL NO

07535444

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Abstract

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In a system for thin film deposition by vapor growth, the contamination of devices and the formation of particles in the deposited thin film inside the system are prevented by the provision therein of an anti-contamination means which is chosen from among (1) an electrolytic cop-per foil having a fine-grained thin layer of copper or/and copper oxide formed by copper plating on the matte surface of the copper foil, (2) an electrolytic copper foil having a fine-grained thin layer of copper or/and copper oxide formed by copper plating on the matte surface of the foil and coated with a material which is the same as or is harmless and similar to the material to be deposited as a thin film by vapor growth onto the substrate, (3) a corrugated metal foil, and (4) a metal foil formed with a plurality of irregularities by embossing.

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Patent Owner(s)

Patent OwnerAddress
NIKKO MATERIALS COMPANY LIMITEDTOKYO 105-8407

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Anan, Junichi Kitaibaraki, JP 6 175
Kanou, Osamu Kitaibaraki, JP 6 124
Sawada, Susumi Kitaibaraki, JP 1 66
Seki, Takakazu Kitaibaraki, JP 3 110
Wada, Hironori Kitaibaraki, JP 16 174

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