Amorphous silicon photoelectric device
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United States of America Patent
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Aug 18, 1992
Issued Date -
N/A
app pub date -
Feb 10, 1989
filing date -
Mar 14, 1985
priority date (Note) -
Expired
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Abstract
A photoelectric device suitable for use as an image sensor includes a body of amorphous silicon and a pair of electrodes sandwiching the body. The amorphous silicon body includes at least one kind of oxygen, carbon, and nitrogen atoms and it has an ability to exhibit a predetermined level of photoconductivity for an optical bandgap of 2.0 eV or more. The amorphous silicon body may have either a mono-layered structure or a multi-layered structure. In the latter case, the body may have a p-i-n structure.
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