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Abstract

An apparatus for growing a single crystal of a semiconductor compound of Group III-V or Group II-VI such as GaAs, InP, or CdTe by using a horizontal zone melt technique. A direct monitoring furnace comprising a double quartz tube made of a transparent material is disposed in the high temperature section of the grower, thereby enabling the observation of the entire crystal growth procedure with the naked eye or with a CCD (charge coupled device) camera tube, enabling high-speed variation of temperature gradient as well as high-speed heating, and thus enabling the single crystal growth of GaAs with low defects and high uniformity, and thus enabling the single crystal growth of GaAs with low defects and high uniformity in the axial direction of growth. The direct monitoring furnace includes a sub-heater as well as a main heating wire, so that a spike zone can be formed, thereby enabling the manufacture of GaAs wafers with low defects and high uniformity.

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First Claim